Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 279-282  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

Monolithic Integrated Device for Light Amplification

Akio Sasaki, Ken-ichi Matsuda, Yuichiro Kimura, and Shigeo Fujita

A monolithic light amplifier has been constructed in an LPE InGaAsP/InP multi-layered structure which includes a heterojunction phototransistor (HPT) and a double heterojunction (DH) light-emitting diode (LED). A high-current and high-gain HPT required to drive a DHLED has been successfully produced by using Cd as a p-type dopant for the base region. A positive gain of 1.3 and a differential power gain of 6 have been achieved by suppressing the optical feedback from the LED to the HPT.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/279/