Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 307-310  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

Internal Loss of InGaAsP/InP Buried Crescent (λ=1.3 µm) Laser

Hideyo Higuchi, Hirofumi Namizaki, Etsuji Oomura, Ryoichi Hirano, Yasushi Sakakibara, Wataru Susaki and Kyoichiro Fujikawa

The temperature dependence of the internal loss α of the InGaAsP/InP buired crescent (λ=1.3 µm) laser is presented in the temperature range 20∼80°C. α is about 18 cm^-1 and no apparent temperature dependence of α is observed in this temperature range. This indicates that the temperature-sensitive behavior of the threshold current in 1.3 µm laser is not due to the internal loss. The decrease in the external quantum efficiency with increasing temperature is attributed to the decrease in the internal quantum efficiency, which is possibly caused by some leakage current.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/307/