Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 385-388  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

Chemical Vapor Deposition and Characterization of a Phosphorus-Nitride (P₃N₅) Gate Insulator for an Inversion-Mode InP MISFET

Yukihiro Hirota, Takeshi Kobayashi¹ and Yoshitaka Furukawa

A new gate insulating film consisting of P₃N₃ was formed on an InP surface by a new CVD method. In this method a mixture of PH₃ and NH₃ was used as a reagent gas. The film showed ohmic characteristics with 3×10¹⁵ Ωcm at electric fields up to 4×10⁶ V/cm. The surface state density at the P₃N₃–InP interface decreased with decreasing deposition temperature, T_D, and it was reduced to 2×10¹²/cm²·eV near the conduction band edge when T_D=500°C. Below this temperature, the film became non-stoichiometric (P rich) and exhibited hygroscopic deterioration with water vapor. An inversion-mode n-channel InP-MISFET was fabricated using P₃N₃ film as a gate insulator. An effective electron mobility of 1000∼1640 cm²/V·sec was obtained for this device.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/385/