The predeposition of boron atoms in silicon by using a boron nitride planar source and the redistribution of the deposited layers under various conditions have been studied. A simulation program incorporating the continuity and Poisson's equations has been established. A diffusion model based on the vacancy-interstitialcy mechanism has been used to analyze the boron distribution profiles. The consumptions of silicon due to the formation of boron rich layers (BRL) during chemical depositions and the formation of silicon dioxide layers during thermal oxidations have been taken into account. The diffusivity parameters, the segregation coefficient, the oxidation rate constants, and the BRL formation rate have been determined by fitting the deposited and redistributed profiles, the sheet resistance, the junction depth and the oxide thickness.