Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 605-606 |Previous Article| |Next Article| |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
Lateral-Epitaxy of CVD a-Si over SiO2 Stripe-Area by Furnace-Annealing
Yasuo Kunii,
Michiharu Tabe and
Kenji Kajiyama
Electrical Communication Laboratories, NTT, Musashino, Tokyo 180, Japan
URL:
http://jjap.jsap.jp/link?JJAPS/22S1/605/
