Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 89-93 |Previous Article| |Next Article| |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
MNOS Retention-Endurance Characteristics Enhancement Using Graded Nitride Dielectric
Fairchild Microprocessor Division, Santa Clara CA 95051, U.S.A.
1McDonnell Douglas Microelectronics Center, Huntington Beach, CA 92647, U.S.A.
2Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
Supported by a microscopic model, a graded nitride dielectric MNOS memory transistor has been developed. In this paper, improvements of MNOS endurance-retention characteristics of the graded nitride MNOS memory transistor are discussed in view of the device model. Nitride dielectrics fabricated with APCVD and LPCVD processes are studied.