Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 95-98 |Previous Article| |Next Article| |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982
Diffusion Length Measurement Using Dynamic MOS RAM
LSI Research and Development Laboratory, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664, Japan
A new method for the diffusion length measurement has been proposed using the minority carrier injection in the conventional 64 K dynamic RAM. The temperature dependence of the diffusion length has been measured by this method. The experimental results confirmed the validity of this method for the dynamic RAM analysis.