Jpn. J. Appl. Phys. 22 (1983) Supplement 22-1 pp. 95-98  |Previous Article| |Next Article|  |Table of Contents|
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14th Conf. (1982 Int.) Solid State Devices, Tokyo, 1982

Diffusion Length Measurement Using Dynamic MOS RAM

Masaki Kumanoya, Makoto Taniguchi, Michihiro Yamada, Toshifumi Kobayashi, Yasuji Nagayama and Takao Nakano

A new method for the diffusion length measurement has been proposed using the minority carrier injection in the conventional 64 K dynamic RAM. The temperature dependence of the diffusion length has been measured by this method. The experimental results confirmed the validity of this method for the dynamic RAM analysis.

URL: http://jjap.jsap.jp/link?JJAPS/22S1/95/