Jpn. J. Appl. Phys. 26 (1987) Supplement 26-3-1 pp. 707-708  |Previous Article| |Next Article|  |Table of Contents|
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Proc. 18th Int. Conf. Low Temperature Physics, Kyoto, 1987

Electrical Resistance in Ion Beam Mixed Al/Si Thin Films

Xiao-Xing Xi, Qi-Ze Ran¹, Jia-Rui Liu¹ and Wei-Yan Guan¹

Al/Si multilayer films were bombarded with energetic Ar ions at liquid helium temperature and the electrical resistances of the ion beam mixed samples were measured from 4.2K to 300K. In the sample with rather high Si concentration, a granular-like structure was formed during mixing and a logarithmical temperature-dependence was observed. It is proposed that the electron localization took place in this ion beam mixed Al/Si film.

URL: http://jjap.jsap.jp/link?JJAPS/26S3/707/