Jpn. J. Appl. Phys. 26 (1987) Supplement 26-4 pp. 61-66  |Previous Article| |Next Article|  |Table of Contents|
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Proc. Int. Symp. Optical Memory, Tokyo, 1987

High Speed Overwritable Phase Change Optical Disk Material

Noboru Yamada, Eiji Ohno, Nobuo Akahira, Ken'ichi Nishiuchi, Ken'ichi Nagata and Masatoshi Takao

Central Research Laboratories, Matsushita Electric Industrial Co., Ltd. 3-15 Yagumo-Nakamachi, Moriguchi, Osaka 570, Japan

It was found that GeTe-Sb2Te3 pseud-binary amorphous alloy films showed remarkably fast switching properties to laser irradiation. By the static laser irradiation test, the film whose composition corresponded to stoichiometric compound of GeSb2Te4 were crystallized within 50ns of pulse duration at power of 8mW, whilst they could be amorphized with the same pulse duration at power of 20mW. Direct overwriting cycle test was performed on the revolving disk system for 105 times using single laser beam. CNR of more than 50dB and erasability of -22dB were obtained for linear velocity of 22m/s and overwriting frequencies of 5 and 7 MHz. The laser powers were 22 mW for recording and 10 mW for erasing. These materials will be applicable to high data rate direct overwritable disk media.


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