Jpn. J. Appl. Phys. 32 (1993) Supplement 32-1 pp. 285-287  |Previous Article| |Next Article|  |Table of Contents|
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Proc. 5th Int. Conf. High Pressure in Semiconductor Physics, Kyoto, 1992

Pressure Induced Quantum Confined Excitons in Layered Metal Tri-Iodide Crystals

H. Kurisu, T. Tanaka, T. Karasawa and T. Komatsu

Quantum confined exciton states are analyzed from the absorption, luminescence and Raman spectra under hydrostatic pressure in SbI₃ and BiI₃ crystals. In SbI₃, a new transition line series of excitons suddenly appears below the fundamental absorption edge under the pressure higher than ∼1.4 GPa. In BiI₃, the similar line series appears even at atmospheric pressure. The energies of the lines converge to the low energy side revealing a feature of the quantum confinement. The pressure induced quantum confined states are discussed in terms of a phase transition of electronic structure due to the molecular rearrangement.

URL: http://jjap.jsap.jp/link?JJAPS/32S1/285/
KEYWORDS:hydrostatic pressure, quantum confined state, exciton, stacking fault, BiI₃, SbI₃