Jpn. J. Appl. Phys. 32 (1993) Supplement 32-1 pp. 285-287  |Previous Article| |Next Article|  |Table of Contents|
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Proc. 5th Int. Conf. High Pressure in Semiconductor Physics, Kyoto, 1992

Pressure Induced Quantum Confined Excitons in Layered Metal Tri-Iodide Crystals

H. Kurisu, T. Tanaka, T. Karasawa and T. Komatsu

Department of Physics, Faculty of Science, Osaka City University, Osaka 558, Japan

Quantum confined exciton states are analyzed from the absorption, luminescence and Raman spectra under hydrostatic pressure in SbI3 and BiI3 crystals. In SbI3, a new transition line series of excitons suddenly appears below the fundamental absorption edge under the pressure higher than ∼1.4 GPa. In BiI3, the similar line series appears even at atmospheric pressure. The energies of the lines converge to the low energy side revealing a feature of the quantum confinement. The pressure induced quantum confined states are discussed in terms of a phase transition of electronic structure due to the molecular rearrangement.

URL: http://jjap.jsap.jp/link?JJAPS/32S1/285/
KEYWORDS:hydrostatic pressure, quantum confined state, exciton, stacking fault, BiI3, SbI3


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