(Received June 7, 1993)
Current achievements in controlling the physical properties of II-III2-VI4 defective compounds and their solid solutions by employing different methods of defect engineering are analysed. The main attention is paid to such effects as non-stoichiometry, order-disorder phase transitions as well as to non-equilibrium treatment related phenomena. It has been established that the deviation of II-III2-VI4 compound composition from stoichiometry is accompanied by an intensive formation of antisite cationic defects. A significant disorder is characteristic for the materials containing isoperiodical cations. Ion implantation is shown to be the most perspective tool for the purposive controlling of the physical characteristics. The peculiarities of radiation defect annealing as well as the application purposes of the materials involved for electronic devices possessing a high radiation stability are being discussed.
KEYWORDS:defect engineering, ternary semiconductors, defective compounds, nonstoichiometry, phase transition, ion implantation