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SPOTLIGHTS

Vol. 49 (2010)

Jpn. J. Appl. Phys. 49 (2010) 120204

• On the Contribution of Friction to the Contact Damping in Atomic Force Acoustic Microscopy
• Arnaud Caron, Walter Arnold, and Hans-Joerg Fecht

Jpn. J. Appl. Phys. 49 (2010) 121503

• Effect of an Ultrathin SiN Cap Layer on the Bias Temperature Instability in Metal–Oxide–Semiconductor Field-Effect Transistors with HfSiON Gate Stacks
• Shiyang Zhu, Shinya Takeue, and Anri Nakajima

Jpn. J. Appl. Phys. 49 (2010) 121504

• Local Dielectric Property of Hafnium and Lanthanum Atoms in HfLaO_x
• Akinori Fukushima, Shinya Sugino, Yasushi Tsuchida, Masato Senami, and Akitomo Tachibana

Jpn. J. Appl. Phys. 49 (2010) 124001

• Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
• Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada, Genshiro Kawachi, and Masakiyo Matsumura

Jpn. J. Appl. Phys. 49 (2010) 110208

• Enhancement and Stabilization of Hole Concentration of Hydrogen-Terminated Diamond Surface Using Ozone Adsorbates
• Michal Kubovic and Makoto Kasu

Jpn. J. Appl. Phys. 49 (2010) 100209

• Reverse Propagation of Atmospheric Pressure Plasma Jets
• Tsuyohito Ito, Aurélien Raddenzati, Artabaze Shams, and Satoshi Hamaguchi

Jpn. J. Appl. Phys. 49 (2010) 106102

• Transient Phenomena in Plasma-Enhanced Chemical Vapor Deposition Processes of Thin-Film Silicon
• Shota Nunomura, Isao Yoshida, and Michio Kondo

Jpn. J. Appl. Phys. 49 (2010) 090208

• Measurement of Strain in Freestanding Si/Si_xN_y Membrane by Convergent Beam Electron Diffraction and Finite Element Method
• Hongye Gao, Ken-ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, and Hiroshi Nakashima

Jpn. J. Appl. Phys. 49 (2010) 093102

• Attaching Thiolated Superconductor Grains on Gold Surfaces for Nanoelectronics Applications
• Luis De Los Santos Valladares, Angel Bustamante Dominguez, Justin Llandro, Seiichi Suzuki, Thanos Mitrelias, Richard Bellido Quispe, Crispin H. W. Barnes, and Yutaka Majima

Jpn. J. Appl. Phys. 49 (2010) 09MC02

• Size Effect of Nanograined BaTiO₃ Ceramics Fabricated by Aerosol Deposition Method
• Takuya Hoshina, Tsutomu Furuta, Yoichi Kigoshi, Saki Hatta, Naohiro Horiuchi, Hiroaki Takeda, and Takaaki Tsurumi

Jpn. J. Appl. Phys. 49 (2010) 080201

• Process Conditions for Improvement of Electrical Properties of Al₂O₃/n-GaN Structures Prepared by Atomic Layer Deposition
• Yujin Hori, Chihoko Mizue, and Tamotsu Hashizume

Jpn. J. Appl. Phys. 49 (2010) 082301

• Tandem Dye-Sensitized Solar Cells Consisting of Nanoporous Titania Sheet
• Kenshiro Uzaki, Shyam S. Pandey, Yuhei Ogimi, and Shuzi Hayase

Jpn. J. Appl. Phys. 49 (2010) 085502

• Polymorphs of Rubrene Crystal Grown from Solution
• Takeshi Matsukawa, Masashi Yoshimura, Masahito Uchiyama, Masakazu Yamagishi, Akiko Nakao, Yoshinori Takahashi, Junichi Takeya, Yasuo Kitaoka, Yusuke Mori, and Takatomo Sasaki

Jpn. J. Appl. Phys. 49 (2010) 08JD01

• Analysis of Plasma Wall Reactions Using Virtual Optical Emission Spectrometry Signal during Dielectric Etching
• Nobuyuki Kuboi, Masanaga Fukasawa, Atsushi Kawashima, Keiji Oshima, Kazunori Nagahata, and Tetsuya Tatsumi

Jpn. J. Appl. Phys. 49 (2010) 08LA02

• Scanning Electrometer: Mapping of Electric Potential and Its Fluctuation
• Yukio Kawano

Jpn. J. Appl. Phys. 49 (2010) 071605

• Self Contact Organic Transistors
• Jun-ichi Inoue, Hiroshi Wada, and Takehiko Mori

Jpn. J. Appl. Phys. 49 (2010) 07HB11

• Plate Waves in Locally Resonant Sonic Materials
• Jin-Chen Hsu and Tsung-Tsong Wu

Jpn. J. Appl. Phys. 49 (2010) 060213

• Structural and Optical Properties of Nonpolar AlN(1120) Films Grown on ZnO(1120) Substrates with a Room-Temperature GaN Buffer Layer
• Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, and Hiroshi Fujioka

Jpn. J. Appl. Phys. 49 (2010) 061101

• Effects of Titania Surface Orientation on the Heterogeneous Formation of Barium Titanate by Hydrothermal Synthesis
• Minoru Ryu, Toshimasa Suzuki, Keisuke Kobayashi, Tatsuo Sakashita, and Youichi Mizuno

Jpn. J. Appl. Phys. 49 (2010) 06GA01

• Modeling Optical Lithography Physics
• Andrew R. Neureuther, Juliet Rubinstein, Eric Chin, Lynn Wang, Marshal Miller, Chris Clifford, and Kenji Yamazoe

Jpn. J. Appl. Phys. 49 (2010) 051304

• Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
• Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi

Jpn. J. Appl. Phys. 49 (2010) 056203

• Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
• Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono

Jpn. J. Appl. Phys. 49 (2010) 040205

• Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
• Tadashi Okumura, Hitomi Ito, Daisuke Kondo, Nobuhiko Nishiyama, and Shigehisa Arai

Jpn. J. Appl. Phys. 49 (2010) 045203

• Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots
• Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, and Hiroshi Mizuta

Jpn. J. Appl. Phys. 49 (2010) 04DD19

• Physical Model for Reset State of Ta₂O₅/TiO₂-Stacked Resistance Random Access Memory
• Yukihiro Sakotsubo, Masayuki Terai, Setsu Kotsuji, Toshitsugu Sakamoto, and Mitsuhiro Hada

Jpn. J. Appl. Phys. 49 (2010) 04DG01

• Strong Sum Frequency Generation in a GaAs/AlAs Coupled Multilayer Cavity Grown on a (113)B-Oriented GaAs Substrate
• Fumiya Tanaka, Tomoya Takahashi, Ken Morita, Takahiro Kitada, and Toshiro Isu

Jpn. J. Appl. Phys. 49 (2010) 04DG16

• Enhanced Room-Temperature 1.6 µm Electroluminescence from Si-Based Double-Heterostructure Light-Emitting Diodes Using Iron Disilicide
• Mitsushi Suzuno, Tomoaki Koizumi, Hideki Kawakami, and Takashi Suemasu

Jpn. J. Appl. Phys. 49 (2010) 030207

• Development of a Total Reflection Zone Plate for Hard X-ray Focusing
• Takuya Tsuji, Hidekazu Takano, Takahisa Koyama, Yoshiyuki Tsusaka, and Yasushi Kagoshima

Jpn. J. Appl. Phys. 49 (2010) 032301

• Pentacene:Fullerene Multilayer-Heterojunction Organic Photovoltaic Cells Fabricated by Alternating Evaporation Method
• Jun Sakai, Tetsuya Taima, Toshihiro Yamanari, Yuji Yoshida, Akihiko Fujii, and Masanori Ozaki

Jpn. J. Appl. Phys. 49 (2010) 032703

• Carrier-Envelope Phase Control of Few-Cycle Parametric Chirped-Pulse Amplifier
• Shunsuke Adachi, Nobuhisa Ishii, Yohei Kobayashi, Yutaka Nomura, Jiro Itatani, Teruto Kanai, and Shuntaro Watanabe

Jpn. J. Appl. Phys. 49 (2010) 03CD02

• 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation
• Hiroki Ohara, Toshinari Sasaki, Kousei Noda, Shunichi Ito, Miyuki Sasaki, Yuta Endo, Shuhei Yoshitomi, Junichiro Sakata, Tadashi Serikawa, and Shunpei Yamazaki

Jpn. J. Appl. Phys. 49 (2010) 021005

• Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
• Nidhi, David F. Brown, Stacia Keller, and Umesh K. Mishra

Jpn. J. Appl. Phys. 49 (2010) 02BA02

• A Simple Combinatorial Method Aiding Research on Single-Walled Carbon Nanotube Growth on Substrates
• Suguru Noda, Hisashi Sugime, Kei Hasegawa, Kazunori Kakehi, and Yosuke Shiratori